FGH40T65SHD-F155
- Mfr.Part #
- FGH40T65SHD-F155
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT, 80A, 650V, N-CHANNEL, TO-2
- Stock
- 221
- In Stock :
- 221
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 650V
- Max Power Dissipation :
- 268W
- Power - Max :
- 268W
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Reverse Recovery Time :
- 31.8 ns
- Transistor Application :
- POWER CONTROL
- Max Collector Current :
- 80A
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2012
- IGBT Type :
- Trench Field Stop
- JEDEC-95 Code :
- TO-247AB
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 40A
- Factory Lead Time :
- 7 Weeks
- Weight :
- 6.39g
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Td (on/off) @ 25°C :
- 19.2ns/65.6ns
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Switching Energy :
- 1.01mJ (on), 297μJ (off)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 120A
- Gate Charge :
- 72.2nC
- Datasheets
- FGH40T65SHD-F155

FGH40T65SHD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40T65SHD-F155 Description
FGH40T65SHD-F155 is a 650v IGBT. Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor FGH40T65SHD-F155 is in the TO?247?3LD package with 268W power dissipation.
FGH40T65SHD-F155 Features
Maximum Junction Temperature: Tj =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat)= 1.6 V(Typ.)@Ic=40A
100% of the Parts Tested for ILM (Note 1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
This Device is Pb-Free and is RoHS Compliant
FGH40T65SHD-F155 Applications
Solar Inverter
UPS
Welder
Telecom
ESS
PFC
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