FGH40T65SHD-F155

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Gate Charge :

72.2nC

Weight :

6.39g

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-247AB

Collector Emitter Voltage (VCEO) :

2.1V

Package / Case :

TO-247-3

Terminal Position :

Single

Factory Lead Time :

7 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Td (on/off) @ 25°C :

19.2ns/65.6ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Max Power Dissipation :

268W

Number of Terminations :

3

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

IGBT Type :

Trench Field Stop

Test Condition :

400V, 40A, 6 Ω, 15V

Transistor Application :

POWER CONTROL

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Switching Energy :

1.01mJ (on), 297μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

80A

Number of Elements :

1

Published :

2012

Reverse Recovery Time :

31.8 ns

Collector Emitter Breakdown Voltage :

650V

Terminal Finish :

Tin (Sn)

Input Type :

Standard

Current - Collector Pulsed (Icm) :

120A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Power - Max :

268W

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 40A

JESD-609 Code :

e3