FGH40T120SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

4 Weeks

Number of Pins :

3

Max Collector Current :

80A

Length :

15.87mm

Td (on/off) @ 25°C :

40ns/475ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Finish :

Tin (Sn)

Weight :

6.39g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Turn-Off Delay Time :

475 ns

Max Power Dissipation :

555W

HTS Code :

8541.29.00.95

Collector Emitter Voltage (VCEO) :

1.2kV

Max Junction Temperature (Tj) :

175°C

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Reverse Recovery Time :

65 ns

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Pbfree Code :

yes

Gate Charge :

370nC

Mounting Type :

Through Hole

Element Configuration :

Single

Continuous Collector Current :

80A

Test Condition :

600V, 40A, 10 Ω, 15V

Current - Collector Pulsed (Icm) :

160A

Height :

24.75mm

Package / Case :

TO-247-3

Power Dissipation :

555W

Input Type :

Standard

Width :

4.82mm

Collector Emitter Saturation Voltage :

1.8V

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

25V

IGBT Type :

Trench Field Stop

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Turn On Delay Time :

40 ns

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

7.5V

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1200V

Switching Energy :

2.7mJ (on), 1.1mJ (off)