FGH40T120SMD

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Mfr.Part #
FGH40T120SMD
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT TRENCH/FS 1200V 80A TO247-3
Stock
5,220
In Stock :
5,220

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Mounting Type :
Through Hole
Weight :
6.39g
Current - Collector Pulsed (Icm) :
160A
Gate-Emitter Voltage-Max :
25V
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
475 ns
Reverse Recovery Time :
65 ns
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
1.2kV
IGBT Type :
Trench Field Stop
Collector Emitter Breakdown Voltage :
1.2kV
Gate-Emitter Thr Voltage-Max :
7.5V
Test Condition :
600V, 40A, 10 Ω, 15V
Width :
4.82mm
Package / Case :
TO-247-3
Published :
2013
Mount :
Through Hole
Collector Emitter Saturation Voltage :
1.8V
Power Dissipation :
555W
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
HTS Code :
8541.29.00.95
Factory Lead Time :
4 Weeks
Max Junction Temperature (Tj) :
175°C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn On Delay Time :
40 ns
Continuous Collector Current :
80A
Switching Energy :
2.7mJ (on), 1.1mJ (off)
Input Type :
Standard
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Packaging :
Tube
JESD-609 Code :
e3
Td (on/off) @ 25°C :
40ns/475ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Power Dissipation :
555W
Operating Temperature :
-55°C~175°C TJ
Length :
15.87mm
Max Collector Current :
80A
Pbfree Code :
yes
Height :
24.75mm
Number of Pins :
3
Gate Charge :
370nC
Datasheets
FGH40T120SMD
Introducing Transistors - IGBTs - Single onsemi FGH40T120SMD from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, FGH40T120SMD pinout, FGH40T120SMD datasheet PDF, FGH40T120SMD amp .Beyond Transistors - IGBTs - Single onsemi FGH40T120SMD ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH40T120SMD


FGH40T120SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH40T120SMD Description

The FGH40T120SMD Gate Bipolar Transistor, also known as an IGBT, is a three-terminal power semiconductor device that is known for its high efficiency and quick switching. By integrating an isolated gate FET for the control input and a bipolar power transistor as a switch in a single device, the FGH40T120SMD IGBT combines the straightforward gate-drive characteristics of MOSFETs with the high-current and low–saturation–voltage performance of bipolar transistors.


FGH40T120SMD Features

  • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A

  • 100% of the Parts Tested for ILM(1)

  • High Input Impedance

  • FS Trench Technology, Positive Temperature Coefficient

  • High-Speed Switching

  • These Devices are Pb?Free and are RoHS Compliant


FGH40T120SMD Applications

  • Solar Inverter

  • Welder

  • UPS & PFC applications




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