FGH40T120SMD
- Mfr.Part #
- FGH40T120SMD
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Stock
- 5,220
- In Stock :
- 5,220
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 370nC
- Current - Collector Pulsed (Icm) :
- 160A
- ECCN Code :
- EAR99
- Width :
- 4.82mm
- Test Condition :
- 600V, 40A, 10 Ω, 15V
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 80A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.8V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 475 ns
- Input Type :
- Standard
- IGBT Type :
- Trench Field Stop
- Td (on/off) @ 25°C :
- 40ns/475ns
- Terminal Finish :
- Tin (Sn)
- Reverse Recovery Time :
- 65 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 40A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 555W
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Packaging :
- Tube
- Weight :
- 6.39g
- Gate-Emitter Thr Voltage-Max :
- 7.5V
- Continuous Collector Current :
- 80A
- Height :
- 24.75mm
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Turn On Delay Time :
- 40 ns
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-247-3
- Reach Compliance Code :
- not_compliant
- Switching Energy :
- 2.7mJ (on), 1.1mJ (off)
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Length :
- 15.87mm
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Max Junction Temperature (Tj) :
- 175°C
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 555W
- JESD-609 Code :
- e3
- Gate-Emitter Voltage-Max :
- 25V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FGH40T120SMD
FGH40T120SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40T120SMD Description
The FGH40T120SMD Gate Bipolar Transistor, also known as an IGBT, is a three-terminal power semiconductor device that is known for its high efficiency and quick switching. By integrating an isolated gate FET for the control input and a bipolar power transistor as a switch in a single device, the FGH40T120SMD IGBT combines the straightforward gate-drive characteristics of MOSFETs with the high-current and low–saturation–voltage performance of bipolar transistors.
FGH40T120SMD Features
-
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
-
100% of the Parts Tested for ILM(1)
-
High Input Impedance
-
FS Trench Technology, Positive Temperature Coefficient
-
High-Speed Switching
-
These Devices are Pb?Free and are RoHS Compliant
FGH40T120SMD Applications
-
Solar Inverter
-
Welder
-
UPS & PFC applications
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