FGH40T100SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-247AB

Test Condition :

600V, 40A, 10 Ω, 15V

Packaging :

Tube

Current - Collector Pulsed (Icm) :

120A

RoHS Status :

ROHS3 Compliant

Gate Charge :

265nC

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

4 Weeks

Reverse Recovery Time :

78 ns

Lead Free :

Lead Free

Number of Terminations :

3

JESD-609 Code :

e3

Published :

2012

Radiation Hardening :

No

IGBT Type :

Trench Field Stop

HTS Code :

8541.29.00.95

Collector Emitter Saturation Voltage :

2.3V

Input Type :

Standard

Case Connection :

COLLECTOR

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Element Configuration :

Single

Transistor Application :

POWER CONTROL

Number of Elements :

1

Rise Time-Max :

64ns

Length :

15.87mm

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

29ns/285ns

Max Power Dissipation :

333W

Max Collector Current :

80A

Width :

4.82mm

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 40A

Turn Off Time-Nom (toff) :

305 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

20.82mm

Collector Emitter Breakdown Voltage :

1kV

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

1kV

Switching Energy :

2.35mJ (on), 1.15mJ (off)

Gate-Emitter Thr Voltage-Max :

6.5V

Turn On Time :

76 ns

Mount :

Through Hole

Weight :

6.39g

ECCN Code :

EAR99

Power Dissipation :

333W

Voltage - Collector Emitter Breakdown (Max) :

1000V

Number of Pins :

3

Terminal Finish :

Tin (Sn)