FGA30T65SHD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 30A

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

650V

Pbfree Code :

yes

Packaging :

Tube

Test Condition :

400V, 30A, 6 Ω, 15V

Max Power Dissipation :

238W

Collector Emitter Saturation Voltage :

2.14V

Factory Lead Time :

5 Weeks

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Max Collector Current :

60A

Td (on/off) @ 25°C :

14.4ns/52.8ns

Current - Collector Pulsed (Icm) :

90A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

2.1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3P-3, SC-65-3

Operating Temperature :

-55°C~175°C TJ

Reverse Recovery Time :

31.8 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

6.401g

Switching Energy :

598μJ (on), 167μJ (off)

Input Type :

Standard

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power - Max :

238W

Gate Charge :

54.7nC

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

IGBT Type :

Trench Field Stop