FGA30N65SMD

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Switching Energy :

716μJ (on), 208μJ (off)

Gate Charge :

87nC

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Input Type :

Standard

Power Dissipation :

300W

Width :

5mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn Off Time-Nom (toff) :

125 ns

Transistor Application :

POWER CONTROL

Height :

20.1mm

Reverse Recovery Time :

35ns

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Max Power Dissipation :

300W

Number of Pins :

3

Packaging :

Tube

Td (on/off) @ 25°C :

14ns/102ns

Polarity/Channel Type :

N-Channel

Package / Case :

TO-3P-3, SC-65-3

IGBT Type :

Field Stop

Length :

16.2mm

Test Condition :

400V, 30A, 6 Ω, 15V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Published :

2012

Gate-Emitter Thr Voltage-Max :

6V

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

650V

Collector Emitter Saturation Voltage :

2.29V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 30A

Turn On Time :

41 ns

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Elements :

1

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

90A

Weight :

6.401g

Max Collector Current :

60A

Gate-Emitter Voltage-Max :

20V

HTS Code :

8541.29.00.95

Collector Emitter Breakdown Voltage :

650V