FGA30N65SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Reverse Recovery Time :

35ns

Published :

2012

Gate-Emitter Voltage-Max :

20V

Collector Emitter Saturation Voltage :

2.29V

Weight :

6.401g

Turn Off Time-Nom (toff) :

125 ns

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

90A

Test Condition :

400V, 30A, 6 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 30A

Number of Terminations :

3

Width :

5mm

Switching Energy :

716μJ (on), 208μJ (off)

Td (on/off) @ 25°C :

14ns/102ns

Polarity/Channel Type :

N-Channel

Max Collector Current :

60A

Element Configuration :

Single

Turn On Time :

41 ns

Height :

20.1mm

Radiation Hardening :

No

HTS Code :

8541.29.00.95

JESD-609 Code :

e3

Max Power Dissipation :

300W

Collector Emitter Voltage (VCEO) :

650V

Input Type :

Standard

Transistor Application :

POWER CONTROL

Factory Lead Time :

5 Weeks

Gate-Emitter Thr Voltage-Max :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Length :

16.2mm

Gate Charge :

87nC

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

650V

Power Dissipation :

300W

Number of Pins :

3

IGBT Type :

Field Stop

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)