FGA30N120FTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

7.5V

Transistor Application :

POWER CONTROL

HTS Code :

8541.29.00.95

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

339W

Turn-Off Delay Time :

198 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

730ns

Turn On Delay Time :

31 ns

Weight :

6.401g

Number of Elements :

1

Published :

2004

Collector Emitter Saturation Voltage :

2V

Turn On Time :

167 ns

Power Dissipation :

339W

Collector Emitter Breakdown Voltage :

1.2kV

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

1.2kV

Width :

5mm

Packaging :

Tube

Length :

15.8mm

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

25V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

TO-3P-3, SC-65-3

Input Type :

Standard

IGBT Type :

Trench Field Stop

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

575 ns

Max Collector Current :

60A

Height :

20.1mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Number of Pins :

3

Gate Charge :

208nC

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

1200V

Current - Collector Pulsed (Icm) :

90A