FGA30N60LSDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 30A

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

7 Weeks

IGBT Type :

Trench Field Stop

Published :

2013

Turn Off Time-Nom (toff) :

2870 ns

Reverse Recovery Time :

35 ns

Current - Collector Pulsed (Icm) :

90A

Max Power Dissipation :

480W

Height :

18.9mm

Length :

15.8mm

Gate Charge :

225nC

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

18ns/250ns

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Switching Energy :

1.1mJ (on), 21mJ (off)

Packaging :

Tube

Mounting Type :

Through Hole

Number of Pins :

3

Radiation Hardening :

No

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Max Collector Current :

60A

Gate-Emitter Thr Voltage-Max :

7V

Collector Emitter Voltage (VCEO) :

600V

Fall Time-Max (tf) :

2000ns

Power - Max :

480W

HTS Code :

8541.29.00.95

Mount :

Through Hole

Element Configuration :

Single

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Turn On Time :

62 ns

Test Condition :

400V, 30A, 6.8 Ω, 15V

Width :

5mm

Weight :

6.401g