FGA30N60LSDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

480W

Element Configuration :

Single

Height :

18.9mm

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

7V

Published :

2013

Max Collector Current :

60A

Reverse Recovery Time :

35 ns

Test Condition :

400V, 30A, 6.8 Ω, 15V

Radiation Hardening :

No

Width :

5mm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Weight :

6.401g

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Power - Max :

480W

Input Type :

Standard

Turn Off Time-Nom (toff) :

2870 ns

Switching Energy :

1.1mJ (on), 21mJ (off)

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Length :

15.8mm

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 30A

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

90A

ECCN Code :

EAR99

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

IGBT Type :

Trench Field Stop

Turn On Time :

62 ns

Package / Case :

TO-3P-3, SC-65-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mount :

Through Hole

Gate Charge :

225nC

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

18ns/250ns

Fall Time-Max (tf) :

2000ns

Factory Lead Time :

7 Weeks

Transistor Application :

POWER CONTROL