FGA30N60LSDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Height :

18.9mm

Td (on/off) @ 25°C :

18ns/250ns

Turn On Time :

62 ns

Current - Collector Pulsed (Icm) :

90A

Number of Elements :

1

Radiation Hardening :

No

Mounting Type :

Through Hole

Max Collector Current :

60A

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Reverse Recovery Time :

35 ns

Gate-Emitter Thr Voltage-Max :

7V

Test Condition :

400V, 30A, 6.8 Ω, 15V

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

ECCN Code :

EAR99

Length :

15.8mm

JESD-609 Code :

e3

Switching Energy :

1.1mJ (on), 21mJ (off)

Collector Emitter Voltage (VCEO) :

600V

Gate-Emitter Voltage-Max :

20V

Packaging :

Tube

Transistor Element Material :

SILICON

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Factory Lead Time :

7 Weeks

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 30A

HTS Code :

8541.29.00.95

Fall Time-Max (tf) :

2000ns

Power - Max :

480W

Transistor Application :

POWER CONTROL

Gate Charge :

225nC

Turn Off Time-Nom (toff) :

2870 ns

IGBT Type :

Trench Field Stop

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Weight :

6.401g

Max Power Dissipation :

480W

Package / Case :

TO-3P-3, SC-65-3

Collector Emitter Breakdown Voltage :

600V

Width :

5mm

Terminal Finish :

Tin (Sn)