FGA30S120P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Length :

15.8mm

Published :

2016

Factory Lead Time :

15 Weeks

Operating Temperature :

-55°C~175°C TJ

Max Power Dissipation :

348W

Collector Emitter Breakdown Voltage :

1.3kV

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

25V

Pbfree Code :

yes

Mounting Type :

Through Hole

Rise Time-Max :

490ns

Terminal Finish :

Tin (Sn)

Weight :

6.401g

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.1mm

Gate Charge :

78nC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

5mm

Package / Case :

TO-3P-3, SC-65-3

Mount :

Through Hole

Power - Max :

348W

Number of Terminations :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

Number of Pins :

3

Current - Collector Pulsed (Icm) :

150A

Collector Emitter Saturation Voltage :

2.3V

Max Collector Current :

60A

Collector Emitter Voltage (VCEO) :

1.3kV

ECCN Code :

EAR99

Input Type :

Standard

Voltage - Collector Emitter Breakdown (Max) :

1300V

Gate-Emitter Thr Voltage-Max :

7.5V

IGBT Type :

Trench Field Stop

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED