FDS3682
- Mfr.Part #
- FDS3682
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6A 8SOIC
- Stock
- 6,383
- In Stock :
- 6,383
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 100V
- JESD-30 Code :
- R-PDSO-G8
- DS Breakdown Voltage-Min :
- 100V
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 2.5W Ta
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.035Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Drain Current-Max (Abs) (ID) :
- 6A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Pin Count :
- 8
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.3pF @ 25V
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 156 mJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6A, 10V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- Series :
- PowerTrench®
- Surface Mount :
- yes
- Datasheets
- FDS3682

N-Channel Tape & Reel (TR) 35m Ω @ 6A, 10V ±20V 1.3pF @ 25V 25nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
FDS3682 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 156 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.3pF @ 25V.6A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (6V 10V) reduces this device's overall power consumption.
FDS3682 Features
the avalanche energy rating (Eas) is 156 mJ
a 100V drain to source voltage (Vdss)
FDS3682 Applications
There are a lot of Rochester Electronics, LLC
FDS3682 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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