FDPF13N50FT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Rise Time :

54ns

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Published :

2013

Pbfree Code :

yes

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

684 mJ

Fall Time (Typ) :

47 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Power Dissipation :

42W

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

540m Ω @ 6A, 10V

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

28 ns

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.54Ohm

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Turn-Off Delay Time :

75 ns

Length :

10.36mm

Series :

UniFET™

Number of Terminations :

3

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

42W Tc

Pulsed Drain Current-Max (IDM) :

48A

Input Capacitance (Ciss) (Max) @ Vds :

1930pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.07mm

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

4.9mm

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Drain to Source Breakdown Voltage :

500V

Weight :

2.27g

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Packaging :

Tube