FDPF10N50FT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Through Hole

Series :

UniFET™

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

125W

Drain Current-Max (Abs) (ID) :

9A

Drain-source On Resistance-Max :

0.85Ohm

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

40ns

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tube

Turn On Delay Time :

20 ns

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max :

42W Tc

Fall Time (Typ) :

30 ns

Transistor Element Material :

SILICON

Published :

2013

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

1170pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Continuous Drain Current (ID) :

9A

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.5A, 10V

Mount :

Through Hole

Transistor Application :

SWITCHING

Element Configuration :

Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Factory Lead Time :

8 Weeks

Weight :

2.27g