FDPF10N50FT
- Mfr.Part #
- FDPF10N50FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A TO220F
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 9A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 45 ns
- Series :
- UniFET™
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Through Hole
- Power Dissipation :
- 125W
- Published :
- 2013
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1170pF @ 25V
- Fall Time (Typ) :
- 30 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.5A, 10V
- Turn On Delay Time :
- 20 ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Weight :
- 2.27g
- Drain Current-Max (Abs) (ID) :
- 9A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.85Ohm
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Rise Time :
- 40ns
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 42W Tc
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3 Full Pack
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- Datasheets
- FDPF10N50FT
FDPF10N50FT Documents

N-Channel Tube 850m Ω @ 4.5A, 10V ±30V 1170pF @ 25V 24nC @ 10V TO-220-3 Full Pack
FDPF10N50FT Description
UniFET MOSFET FDPF10N50FT is Fairchild's high voltage MOSFET series, based on flat stripe and DMOS technology, the MOSFET is tailored to reduce on-resistance to provide better switching performance and higher avalanche energy. Through lifetime control, the reverse recovery performance of UniFET FRFETMOSFET is enhanced, its TRIS is less than 100 nsec, and the immunity of reverse DVI DT is 15Vins, while that of ordinary planar MOSFET is more than 200nsec and 4.5Vins respectively. Therefore, in some applications with high performance of MOSFET body diodes, it can remove additional components and improve system reliability. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD), TV, PowerATX and electronic lamp ballasts.
FDPF10N50FT Features
·Low Gate Charge(Typ.18 nC)
·LowCrss(Typ.10 pF)100% Avalanche Tested Improved dv/dt Capability
·RoHS Compliant
FDPF10N50FT Applications
·LCD/LED/PDPTV·Lighting
·Uninterruptible Power Supply
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