FDPF10N50FT
- Mfr.Part #
- FDPF10N50FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A TO220F
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Series :
- UniFET™
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 45 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 125W
- Drain Current-Max (Abs) (ID) :
- 9A
- Drain-source On Resistance-Max :
- 0.85Ohm
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 40ns
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tube
- Turn On Delay Time :
- 20 ns
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 42W Tc
- Fall Time (Typ) :
- 30 ns
- Transistor Element Material :
- SILICON
- Published :
- 2013
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 1170pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Continuous Drain Current (ID) :
- 9A
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.5A, 10V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Weight :
- 2.27g
- Datasheets
- FDPF10N50FT
FDPF10N50FT Documents

N-Channel Tube 850m Ω @ 4.5A, 10V ±30V 1170pF @ 25V 24nC @ 10V TO-220-3 Full Pack
FDPF10N50FT Description
UniFET MOSFET FDPF10N50FT is Fairchild's high voltage MOSFET series, based on flat stripe and DMOS technology, the MOSFET is tailored to reduce on-resistance to provide better switching performance and higher avalanche energy. Through lifetime control, the reverse recovery performance of UniFET FRFETMOSFET is enhanced, its TRIS is less than 100 nsec, and the immunity of reverse DVI DT is 15Vins, while that of ordinary planar MOSFET is more than 200nsec and 4.5Vins respectively. Therefore, in some applications with high performance of MOSFET body diodes, it can remove additional components and improve system reliability. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD), TV, PowerATX and electronic lamp ballasts.
FDPF10N50FT Features
·Low Gate Charge(Typ.18 nC)
·LowCrss(Typ.10 pF)100% Avalanche Tested Improved dv/dt Capability
·RoHS Compliant
FDPF10N50FT Applications
·LCD/LED/PDPTV·Lighting
·Uninterruptible Power Supply
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