FDPF10N50FT
- Mfr.Part #
- FDPF10N50FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A TO220F
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain-source On Resistance-Max :
- 0.85Ohm
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Mounting Type :
- Through Hole
- Series :
- UniFET™
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 40ns
- Drain Current-Max (Abs) (ID) :
- 9A
- Power Dissipation-Max :
- 42W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1170pF @ 25V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 30 ns
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2013
- Turn On Delay Time :
- 20 ns
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 500V
- Turn-Off Delay Time :
- 45 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 125W
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 9A
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Case Connection :
- Isolated
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.5A, 10V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Mount :
- Through Hole
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Weight :
- 2.27g
- Datasheets
- FDPF10N50FT
FDPF10N50FT Documents

N-Channel Tube 850m Ω @ 4.5A, 10V ±30V 1170pF @ 25V 24nC @ 10V TO-220-3 Full Pack
FDPF10N50FT Description
UniFET MOSFET FDPF10N50FT is Fairchild's high voltage MOSFET series, based on flat stripe and DMOS technology, the MOSFET is tailored to reduce on-resistance to provide better switching performance and higher avalanche energy. Through lifetime control, the reverse recovery performance of UniFET FRFETMOSFET is enhanced, its TRIS is less than 100 nsec, and the immunity of reverse DVI DT is 15Vins, while that of ordinary planar MOSFET is more than 200nsec and 4.5Vins respectively. Therefore, in some applications with high performance of MOSFET body diodes, it can remove additional components and improve system reliability. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD), TV, PowerATX and electronic lamp ballasts.
FDPF10N50FT Features
·Low Gate Charge(Typ.18 nC)
·LowCrss(Typ.10 pF)100% Avalanche Tested Improved dv/dt Capability
·RoHS Compliant
FDPF10N50FT Applications
·LCD/LED/PDPTV·Lighting
·Uninterruptible Power Supply
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