FDPF10N50FT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Published :

2013

Drain-source On Resistance-Max :

0.85Ohm

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

45 ns

Mounting Type :

Through Hole

Rise Time :

40ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9A

Case Connection :

Isolated

Number of Pins :

3

Turn On Delay Time :

20 ns

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

9A

Power Dissipation-Max :

42W Tc

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Series :

UniFET™

Number of Elements :

1

Power Dissipation :

125W

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Weight :

2.27g

Fall Time (Typ) :

30 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.5A, 10V

Mount :

Through Hole

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1170pF @ 25V

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Vgs (Max) :

±30V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack