FDPF045N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Power Dissipation-Max :

43W Tc

Power Dissipation :

43W

Mount :

Through Hole

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

268A

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 67A, 10V

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube

Lead Free :

Lead Free

Number of Elements :

1

Drain-source On Resistance-Max :

0.0045ohm

Turn-Off Delay Time :

50 ns

Width :

4.9mm

Pbfree Code :

yes

Vgs (Max) :

±20V

Published :

2011

Length :

10.36mm

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

5270pF @ 50V

Number of Terminations :

3

Series :

PowerTrench®

Radiation Hardening :

No

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Continuous Drain Current (ID) :

67A

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

23 ns

Weight :

2.27g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Rise Time :

26ns

Factory Lead Time :

8 Weeks

Height :

16.07mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Additional Feature :

ULTRA-LOW RESISTANCE