FDPF045N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

43W Tc

Drain-source On Resistance-Max :

0.0045ohm

Power Dissipation :

43W

Additional Feature :

ULTRA-LOW RESISTANCE

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

15 ns

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Height :

16.07mm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

2.27g

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5270pF @ 50V

Turn On Delay Time :

23 ns

Continuous Drain Current (ID) :

67A

Lead Free :

Lead Free

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 67A, 10V

Rise Time :

26ns

Number of Elements :

1

Length :

10.36mm

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

67A Tc

JEDEC-95 Code :

TO-220AB

Width :

4.9mm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Series :

PowerTrench®

Turn-Off Delay Time :

50 ns

Case Connection :

Isolated

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

268A

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V