FDPF085N10A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 40A, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Factory Lead Time :

8 Weeks

Case Connection :

Isolated

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Power Dissipation :

33.3W

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

40A Tc

JESD-609 Code :

e3

Rise Time :

22ns

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Length :

10.36mm

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Published :

2013

Package / Case :

TO-220-3 Full Pack

Width :

4.9mm

Continuous Drain Current (ID) :

40A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

18 ns

Weight :

2.27g

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2695pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

269 mJ

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0085Ohm

Height :

16.07mm

Additional Feature :

ULTRA-LOW RESISTANCE

Fall Time (Typ) :

8 ns

Number of Pins :

3

Lead Free :

Lead Free

Turn-Off Delay Time :

29 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

33.3W Tc

Drain to Source Breakdown Voltage :

100V