FDPF10N50UT

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Mfr.Part #
FDPF10N50UT
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO220F
Stock
2,179
In Stock :
2,179

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-220-3 Full Pack
Number of Elements :
1
Weight :
2.27g
Drain Current-Max (Abs) (ID) :
8A
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 4A, 10V
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1130pF @ 25V
Series :
UniFET™
Factory Lead Time :
6 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
500V
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Turn On Delay Time :
15 ns
Pbfree Code :
yes
Case Connection :
Isolated
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Mounting Type :
Through Hole
Mount :
Through Hole
Element Configuration :
Single
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 250μA
JEDEC-95 Code :
TO-220AB
Height :
16.07mm
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Length :
10.36mm
Vgs (Max) :
±30V
JESD-609 Code :
e3
Radiation Hardening :
No
FET Type :
N-Channel
Width :
4.9mm
Number of Terminations :
3
Power Dissipation :
42W
Power Dissipation-Max :
42W Tc
Terminal Finish :
Tin (Sn)
Turn-Off Delay Time :
46 ns
Transistor Element Material :
SILICON
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Rise Time :
38ns
Continuous Drain Current (ID) :
8A
ECCN Code :
EAR99
Fall Time (Typ) :
33 ns
Datasheets
FDPF10N50UT
Introducing Transistors - FETs, MOSFETs - Single onsemi FDPF10N50UT from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, FDPF10N50UT pinout, FDPF10N50UT datasheet PDF, FDPF10N50UT amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDPF10N50UT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPF10N50UT


N-Channel Tube 1.05 Ω @ 4A, 10V ±30V 1130pF @ 25V 24nC @ 10V TO-220-3 Full Pack

FDPF10N50UT Overview


A device's maximum input capacitance is 1130pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 46 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

FDPF10N50UT Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns


FDPF10N50UT Applications


There are a lot of ON Semiconductor
FDPF10N50UT applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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