FDPF10N50UT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

42W Tc

Rise Time :

38ns

Published :

2013

Height :

16.07mm

Factory Lead Time :

6 Weeks

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation :

42W

JESD-609 Code :

e3

Element Configuration :

Single

Package / Case :

TO-220-3 Full Pack

Weight :

2.27g

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Elements :

1

Number of Pins :

3

Length :

10.36mm

Drain Current-Max (Abs) (ID) :

8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Width :

4.9mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Fall Time (Typ) :

33 ns

Continuous Drain Current (ID) :

8A

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

500V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Series :

UniFET™

Case Connection :

Isolated

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 25V

Turn-Off Delay Time :

46 ns

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V