FDPF10N50UT

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Mfr.Part #
FDPF10N50UT
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 8A TO220F
Stock
2,179
In Stock :
2,179

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.36mm
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3 Full Pack
Mounting Type :
Through Hole
Mount :
Through Hole
Continuous Drain Current (ID) :
8A
Published :
2013
Series :
UniFET™
Transistor Application :
SWITCHING
Height :
16.07mm
Drain Current-Max (Abs) (ID) :
8A
Turn-Off Delay Time :
46 ns
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
30V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Power Dissipation :
42W
Factory Lead Time :
6 Weeks
Vgs (Max) :
±30V
Case Connection :
Isolated
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Pbfree Code :
yes
Power Dissipation-Max :
42W Tc
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
FET Type :
N-Channel
Rise Time :
38ns
Number of Pins :
3
Packaging :
Tube
Fall Time (Typ) :
33 ns
Width :
4.9mm
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
2.27g
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
1.05 Ω @ 4A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
500V
Turn On Delay Time :
15 ns
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Input Capacitance (Ciss) (Max) @ Vds :
1130pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDPF10N50UT from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FDPF10N50UT pinout, FDPF10N50UT datasheet PDF, FDPF10N50UT amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDPF10N50UT ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPF10N50UT


N-Channel Tube 1.05 Ω @ 4A, 10V ±30V 1130pF @ 25V 24nC @ 10V TO-220-3 Full Pack

FDPF10N50UT Overview


A device's maximum input capacitance is 1130pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 46 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

FDPF10N50UT Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns


FDPF10N50UT Applications


There are a lot of ON Semiconductor
FDPF10N50UT applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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