FDPF041N06BL1
- Mfr.Part #
- FDPF041N06BL1
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 77A TO220F
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 308A
- Element Configuration :
- Single
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 365 mJ
- HTS Code :
- 8541.29.00.95
- Turn-Off Delay Time :
- 38 ns
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 77A, 10V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 11 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 2.27g
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 77A
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 29 ns
- Vgs (Max) :
- ±20V
- Series :
- PowerTrench®
- DS Breakdown Voltage-Min :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5690pF @ 30V
- Rise Time :
- 22ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0041Ohm
- Drain to Source Voltage (Vdss) :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 44.1W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Datasheets
- FDPF041N06BL1

N-Channel Tube 4.1m Ω @ 77A, 10V ±20V 5690pF @ 30V 69nC @ 10V 60V TO-220-3 Full Pack
FDPF041N06BL1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 365 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5690pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 38 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 308A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 29 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FDPF041N06BL1 Features
the avalanche energy rating (Eas) is 365 mJ
a continuous drain current (ID) of 77A
the turn-off delay time is 38 ns
based on its rated peak drain current 308A.
a 60V drain to source voltage (Vdss)
FDPF041N06BL1 Applications
There are a lot of ON Semiconductor
FDPF041N06BL1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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