FDPF10N60NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.75Ohm

Radiation Hardening :

No

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Height :

16.07mm

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

25V

Pbfree Code :

yes

Rise Time :

50ns

Case Connection :

Isolated

Turn-Off Delay Time :

70 ns

Turn On Delay Time :

25 ns

Continuous Drain Current (ID) :

10A

Power Dissipation :

38W

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5V

Power Dissipation-Max :

38W Tc

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1475pF @ 25V

Number of Elements :

1

Published :

2013

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

550 mJ

Operating Mode :

ENHANCEMENT MODE

Length :

10.36mm

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Fall Time (Typ) :

50 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

750m Ω @ 5A, 10V

Width :

4.9mm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Weight :

2.27g

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Series :

UniFET-II™

Transistor Element Material :

SILICON

Mount :

Through Hole