FDPF12N50FT
- Mfr.Part #
- FDPF12N50FT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11.5A TO220F
- Stock
- 401
- In Stock :
- 401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.36mm
- Number of Terminations :
- 3
- Turn On Delay Time :
- 21 ns
- Weight :
- 2.27g
- Fall Time (Typ) :
- 35 ns
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Tc
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 50 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation :
- 42W
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 6A, 10V
- Power Dissipation-Max :
- 42W Tc
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Height :
- 16.07mm
- ECCN Code :
- EAR99
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.9mm
- Series :
- UniFET™
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1395pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Drain-source On Resistance-Max :
- 0.7Ohm
- Continuous Drain Current (ID) :
- 11.5A
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 456 mJ
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 500V
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 46A
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Rise Time :
- 45ns
- Packaging :
- Tube
- Datasheets
- FDPF12N50FT

N-Channel Tube 700m Ω @ 6A, 10V ±30V 1395pF @ 25V 30nC @ 10V TO-220-3 Full Pack
FDPF12N50FT Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 456 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1395pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11.5A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 46A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
FDPF12N50FT Features
the avalanche energy rating (Eas) is 456 mJ
a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 46A.
FDPF12N50FT Applications
There are a lot of ON Semiconductor
FDPF12N50FT applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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