FDPF12N35

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Mfr.Part #
FDPF12N35
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 350V 12A TO220F
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
1.11pF @ 25V
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Avalanche Energy Rating (Eas) :
335 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
5V @ 250μA
Package / Case :
TO-220-3 Full Pack
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
380m Ω @ 6A, 10V
Number of Elements :
1
Series :
UniFET™
Drain Current-Max (Abs) (ID) :
12A
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.38Ohm
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
350V
Pulsed Drain Current-Max (IDM) :
48A
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Vgs (Max) :
±30V
Power Dissipation-Max :
31.3W Tc
Current - Continuous Drain (Id) @ 25°C :
12A Tc
DS Breakdown Voltage-Min :
350V
FET Type :
N-Channel
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Qualification Status :
COMMERCIAL
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Peak Reflow Temperature (Cel) :
Not Applicable
Transistor Element Material :
SILICON
Datasheets
FDPF12N35
Introducing Transistors - FETs, MOSFETs - Single onsemi FDPF12N35 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FDPF12N35 pinout, FDPF12N35 datasheet PDF, FDPF12N35 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDPF12N35 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPF12N35


N-Channel Tube 380m Ω @ 6A, 10V ±30V 1.11pF @ 25V 25nC @ 10V 350V TO-220-3 Full Pack

FDPF12N35 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 335 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.11pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 12A.Pulsed drain current is maximum rated peak drain current 48A.A normal operation of the DS requires keeping the breakdown voltage above 350V.This transistor requires a drain-source voltage (Vdss) of 350V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FDPF12N35 Features


the avalanche energy rating (Eas) is 335 mJ
based on its rated peak drain current 48A.
a 350V drain to source voltage (Vdss)


FDPF12N35 Applications


There are a lot of Rochester Electronics, LLC
FDPF12N35 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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