FDPF12N35

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Power Dissipation-Max :

31.3W Tc

DS Breakdown Voltage-Min :

350V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Number of Elements :

1

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.38Ohm

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

12A

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

48A

Drain to Source Voltage (Vdss) :

350V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

Not Applicable

Avalanche Energy Rating (Eas) :

335 mJ

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Packaging :

Tube

Vgs (Max) :

±30V

Series :

UniFET™

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1.11pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA