FDP5800

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Published :

2013

Pbfree Code :

yes

Lead Free :

Lead Free

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tube

REACH SVHC :

No SVHC

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

14A

Resistance :

6mOhm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

Length :

9.9mm

Drain to Source Breakdown Voltage :

60V

Avalanche Energy Rating (Eas) :

652 mJ

Threshold Voltage :

2.5V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

18 ns

Package / Case :

TO-220-3

Current :

81A

Width :

4.5mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

11 Weeks

Continuous Drain Current (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Power Dissipation :

242W

Weight :

4.535924g

Turn-Off Delay Time :

55 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

242W Tc

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

9160pF @ 15V

Rise Time :

19ns

Height :

15.7mm

Fall Time (Typ) :

9 ns

Voltage - Rated DC :

60V

Voltage :

60V

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)