FDP5800

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

14A

Factory Lead Time :

11 Weeks

Rise Time :

19ns

Turn On Delay Time :

18 ns

Power Dissipation-Max :

242W Tc

Published :

2013

Voltage - Rated DC :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

4.5mm

Threshold Voltage :

2.5V

JESD-609 Code :

e3

Length :

9.9mm

Current :

81A

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Packaging :

Tube

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

Height :

15.7mm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Resistance :

6mOhm

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Power Dissipation :

242W

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

9 ns

Continuous Drain Current (ID) :

80A

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

652 mJ

Lead Free :

Lead Free

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9160pF @ 15V

Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

4.535924g

Series :

PowerTrench®

Mount :

Through Hole

Turn-Off Delay Time :

55 ns

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V