FDP55N06

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Mfr.Part #
FDP55N06
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Stock
8,558
In Stock :
8,558

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
95 ns
FET Type :
N-Channel
Resistance :
22mOhm
Threshold Voltage :
2V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
1.8g
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Series :
UniFET™
Power Dissipation-Max :
114W Tc
Factory Lead Time :
5 Weeks
Package / Case :
TO-220-3
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-220AB
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
60V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Rise Time :
130ns
Pulsed Drain Current-Max (IDM) :
220A
Published :
2013
Avalanche Energy Rating (Eas) :
480 mJ
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
JESD-609 Code :
e3
Number of Terminations :
3
Continuous Drain Current (ID) :
55A
Input Capacitance (Ciss) (Max) @ Vds :
1510pF @ 25V
Pbfree Code :
yes
Number of Pins :
3
Turn On Delay Time :
30 ns
Mount :
Through Hole
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
22m Ω @ 27.5A, 10V
Gate to Source Voltage (Vgs) :
25V
Power Dissipation :
114W
Element Configuration :
Single
Turn-Off Delay Time :
70 ns
Vgs (Max) :
±25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDP55N06
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP55N06 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, FDP55N06 pinout, FDP55N06 datasheet PDF, FDP55N06 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP55N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP55N06


N-Channel Tube 22m Ω @ 27.5A, 10V ±25V 1510pF @ 25V 37nC @ 10V TO-220-3

FDP55N06 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The maximum input capacitance of this device is 1510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 55A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 220A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

FDP55N06 Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 220A.
a threshold voltage of 2V


FDP55N06 Applications


There are a lot of ON Semiconductor
FDP55N06 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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