FDP55N06

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Mfr.Part #
FDP55N06
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Stock
8,558
In Stock :
8,558

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
2V
JEDEC-95 Code :
TO-220AB
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1510pF @ 25V
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
60V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
Turn On Delay Time :
30 ns
Gate to Source Voltage (Vgs) :
25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Continuous Drain Current (ID) :
55A
Weight :
1.8g
Pulsed Drain Current-Max (IDM) :
220A
Power Dissipation :
114W
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Factory Lead Time :
5 Weeks
Packaging :
Tube
Qualification Status :
Not Qualified
Power Dissipation-Max :
114W Tc
Fall Time (Typ) :
95 ns
FET Type :
N-Channel
ECCN Code :
EAR99
Published :
2013
Rise Time :
130ns
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Number of Pins :
3
Pbfree Code :
yes
Series :
UniFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
480 mJ
Element Configuration :
Single
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
22m Ω @ 27.5A, 10V
Package / Case :
TO-220-3
Mount :
Through Hole
REACH SVHC :
No SVHC
Resistance :
22mOhm
Turn-Off Delay Time :
70 ns
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP55N06 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, FDP55N06 pinout, FDP55N06 datasheet PDF, FDP55N06 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP55N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP55N06


N-Channel Tube 22m Ω @ 27.5A, 10V ±25V 1510pF @ 25V 37nC @ 10V TO-220-3

FDP55N06 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The maximum input capacitance of this device is 1510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 55A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 220A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

FDP55N06 Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 220A.
a threshold voltage of 2V


FDP55N06 Applications


There are a lot of ON Semiconductor
FDP55N06 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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