FDP55N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Resistance :

22mOhm

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Vgs (Max) :

±25V

Series :

UniFET™

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Through Hole

Number of Pins :

3

Turn-Off Delay Time :

70 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Pbfree Code :

yes

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

1.8g

Pulsed Drain Current-Max (IDM) :

220A

Factory Lead Time :

5 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Avalanche Energy Rating (Eas) :

480 mJ

Rise Time :

130ns

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Fall Time (Typ) :

95 ns

Rds On (Max) @ Id, Vgs :

22m Ω @ 27.5A, 10V

Power Dissipation-Max :

114W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

55A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

114W

Turn On Delay Time :

30 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Drain to Source Breakdown Voltage :

60V