FDP5800
- Mfr.Part #
- FDP5800
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 8
- Stock
- 50,138
- In Stock :
- 50,138
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 652 mJ
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 9.9mm
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 80A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 55 ns
- Rise Time :
- 19ns
- Current Rating :
- 14A
- Threshold Voltage :
- 2.5V
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 9160pF @ 15V
- Factory Lead Time :
- 11 Weeks
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 9 ns
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 18 ns
- Height :
- 15.7mm
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 80A, 10V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®
- Power Dissipation :
- 242W
- Resistance :
- 6mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 242W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 4.5mm
- Current :
- 81A
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 80A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- FET Type :
- N-Channel
- Published :
- 2013
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- FDP5800
FDP5800 Documents

N-Channel Tube 6m Ω @ 80A, 10V ±20V 9160pF @ 15V 145nC @ 10V TO-220-3
FDP5800 Description
This N-Channel MOSFET isproducedusingFairchildSemiconductor's advanced PowerTrenchprocess that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDP5800 Features
Reston)y 4.6 m2(Typ.)@Vas -10 V.I 80A
High-Performance Trench Technology for Extremely Low
RDs(on)
Low Gate Charge
High Power and Current Handling Capability
RoHS Compliant
FDP5800 Applications
Power Tools
Motor Drives and Uninterruptible Power Supplies
Synchronous Rectification
Battery Protection Circuit
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