FDP5800

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Published :

2013

Height :

15.7mm

Number of Pins :

3

Continuous Drain Current (ID) :

80A

REACH SVHC :

No SVHC

Fall Time (Typ) :

9 ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

11 Weeks

Series :

PowerTrench®

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

9160pF @ 15V

Width :

4.5mm

Drain to Source Breakdown Voltage :

60V

Voltage :

60V

Current Rating :

14A

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Element Configuration :

Single

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Resistance :

6mOhm

Vgs (Max) :

±20V

Pbfree Code :

yes

Length :

9.9mm

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

2.5V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Current :

81A

JESD-609 Code :

e3

Rise Time :

19ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Turn-Off Delay Time :

55 ns

Power Dissipation-Max :

242W Tc

Voltage - Rated DC :

60V

Power Dissipation :

242W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

652 mJ

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

18 ns