FDP52N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Voltage - Rated DC :

200V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

2520 mJ

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE ENERGY RATED

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

52A

Packaging :

Tube

Power Dissipation-Max :

357W Tc

Series :

UniFET™

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Number of Pins :

3

Length :

10.1mm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Current Rating :

52A

Vgs (Max) :

±30V

Height :

9.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

357W

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Weight :

1.8g

Turn On Delay Time :

53 ns

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

49m Ω @ 26A, 10V

Pulsed Drain Current-Max (IDM) :

208A

ECCN Code :

EAR99

Fall Time (Typ) :

29 ns

Mount :

Through Hole

Number of Elements :

1

Resistance :

49mOhm

Drain to Source Breakdown Voltage :

200V

Published :

2007

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

48 ns

Rise Time :

175ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V