FDP51N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drain to Source Breakdown Voltage :

250V

Height :

9.4mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

ECCN Code :

EAR99

Turn On Delay Time :

62 ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Series :

UniFET™

Power Dissipation-Max :

320W Tc

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

98 ns

Fall Time (Typ) :

130 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

60m Ω @ 25.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Rise Time :

465ns

Mount :

Through Hole

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

204A

Length :

10.67mm

Width :

4.83mm

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Published :

2017

Lead Free :

Lead Free

Additional Feature :

FAST SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Continuous Drain Current (ID) :

51A

Transistor Application :

SWITCHING

Weight :

1.8g

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3410pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Resistance :

60mOhm

Power Dissipation :

320W

Threshold Voltage :

5V

Packaging :

Tube