FDP5500

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

55V

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.007Ohm

Avalanche Energy Rating (Eas) :

860 mJ

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3565pF @ 25V

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Number of Elements :

1

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

80A

Power Dissipation-Max :

375W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

269nC @ 20V

HTS Code :

8541.29.00.95

Operating Mode :

ENHANCEMENT MODE