FDP5680

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Mfr.Part #
FDP5680
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 40A TO220-3
Stock
18,433
In Stock :
18,433

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
20m Ω @ 20A, 10V
Peak Reflow Temperature (Cel) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
1.85pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Series :
PowerTrench®
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Avalanche Energy Rating (Eas) :
90 mJ
Pin Count :
3
DS Breakdown Voltage-Min :
60V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
60V
Vgs (Max) :
±20V
JESD-609 Code :
e3
Package / Case :
TO-220-3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Finish :
MATTE TIN
Drain Current-Max (Abs) (ID) :
40A
Surface Mount :
No
Operating Temperature :
-65°C~175°C TJ
JESD-30 Code :
R-PSFM-T3
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
120A
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Power Dissipation-Max :
65W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.02Ohm
Mounting Type :
Through Hole
Packaging :
Tube
Datasheets
FDP5680
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP5680 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-65°C~175°C TJ, Mounting Type:Through Hole, FDP5680 pinout, FDP5680 datasheet PDF, FDP5680 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP5680 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP5680


N-Channel Tube 20m Ω @ 20A, 10V ±20V 1.85pF @ 25V 46nC @ 10V 60V TO-220-3

FDP5680 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 90 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.85pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [40A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 120A.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

FDP5680 Features


the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 120A.
a 60V drain to source voltage (Vdss)


FDP5680 Applications


There are a lot of Rochester Electronics, LLC
FDP5680 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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