FDP5680
- Mfr.Part #
- FDP5680
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 40A TO220-3
- Stock
- 18,433
- In Stock :
- 18,433
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 20A, 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.85pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Drain Current-Max (Abs) (ID) :
- 40A
- Surface Mount :
- No
- Operating Temperature :
- -65°C~175°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 120A
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 65W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.02Ohm
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Datasheets
- FDP5680

N-Channel Tube 20m Ω @ 20A, 10V ±20V 1.85pF @ 25V 46nC @ 10V 60V TO-220-3
FDP5680 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 90 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.85pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [40A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 120A.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
FDP5680 Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 120A.
a 60V drain to source voltage (Vdss)
FDP5680 Applications
There are a lot of Rochester Electronics, LLC
FDP5680 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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