FDP5500

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Mfr.Part #
FDP5500
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 55V 80A TO220-3
Stock
12,948
In Stock :
12,948

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Position :
Single
Number of Elements :
1
Transistor Element Material :
SILICON
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
7m Ω @ 80A, 10V
Continuous Drain Current (ID) :
80A
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
55V
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
860 mJ
Packaging :
Tube
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
375W Tc
FET Type :
N-Channel
Mount :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2009
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Gate Charge (Qg) (Max) @ Vgs :
269nC @ 20V
Drain-source On Resistance-Max :
0.007Ohm
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
55V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3565pF @ 25V
Package / Case :
TO-220-3
HTS Code :
8541.29.00.95
Introducing Transistors - FETs, MOSFETs - Single onsemi FDP5500 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, FDP5500 pinout, FDP5500 datasheet PDF, FDP5500 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDP5500 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDP5500


N-Channel Tube 7m Ω @ 80A, 10V ±20V 3565pF @ 25V 269nC @ 20V 55V TO-220-3

FDP5500 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 860 mJ.A device's maximal input capacitance is 3565pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDP5500 Features


the avalanche energy rating (Eas) is 860 mJ
a continuous drain current (ID) of 80A
a 55V drain to source voltage (Vdss)


FDP5500 Applications


There are a lot of ON Semiconductor
FDP5500 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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