FDN371N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.5A, 4.5V

Power Dissipation-Max :

500mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

815pF @ 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Position :

Dual

Rise Time :

9ns

Series :

PowerTrench®

Turn On Delay Time :

7 ns

Drain-source On Resistance-Max :

0.05Ohm

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Published :

2008

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Radiation Hardening :

No

Voltage - Rated DC :

20V

Number of Elements :

1

Fall Time (Typ) :

9 ns

Current Rating :

2.5A

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

17 ns

Power Dissipation :

500mW

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

20V

Continuous Drain Current (ID) :

2.5A