FDN361BN
- Mfr.Part #
- FDN361BN
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 1.4A SUPERSOT3
- Stock
- 172,597
- In Stock :
- 172,597
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta
- Additional Feature :
- FAST SWITCHING
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Published :
- 2017
- Series :
- PowerTrench®
- Turn On Delay Time :
- 3 ns
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 16 ns
- Weight :
- 30mg
- Terminal Position :
- Dual
- Threshold Voltage :
- 2.1V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 8ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 1.8nC @ 4.5V
- Continuous Drain Current (ID) :
- 1.4A
- Lead Free :
- Lead Free
- Length :
- 1.4mm
- Terminal Form :
- Gull wing
- Width :
- 2.92mm
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 500mW Ta
- Height :
- 940μm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 193pF @ 15V
- Power Dissipation :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 1.4A, 10V
- Datasheets
- FDN361BN

N-Channel Tape & Reel (TR) 110m Ω @ 1.4A, 10V ±20V 193pF @ 15V 1.8nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN361BN Description
FDN361BN N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN361BN MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN361BN ON Semiconductor is a general-purpose device and can be used in Battery Powered Circuits, Notebook Computers, PCMCIA Cards, and Portable Phones.
FDN361BN Features
Low Gate Charge
Industry Standard Package
RDS(ON) = 160 mΩ @ VGS = 4.5 V
High Performance
RDS(ON) = 110 mΩ @ VGS = 10 V
FDN361BN Applications
Battery Powered Circuits
Notebook Computers
PCMCIA Cards
Portable Phones
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