FDN360P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

500mW

REACH SVHC :

No SVHC

Dual Supply Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mount :

Surface Mount

Number of Terminations :

3

Transistor Element Material :

SILICON

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

6 ns

Width :

1.4mm

Pbfree Code :

yes

Terminal Position :

Dual

Power Dissipation-Max :

500mW Ta

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2A

Number of Channels :

1

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Fall Time (Typ) :

6 ns

Current Rating :

-2A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Height :

1.22mm

Resistance :

80mOhm

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Series :

PowerTrench®

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

298pF @ 15V

Continuous Drain Current (ID) :

2A

Transistor Application :

SWITCHING

Voltage - Rated DC :

-30V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Threshold Voltage :

20V

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

13ns

Weight :

30mg

Published :

2003

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Turn-Off Delay Time :

11 ns

Length :

2.92mm

JESD-609 Code :

e3