FDN359AN
- Mfr.Part #
- FDN359AN
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.7A SUPERSOT3
- Stock
- 7,337
- In Stock :
- 7,337
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Current Rating :
- 2.7A
- Turn On Delay Time :
- 6 ns
- Resistance :
- 46mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Ta
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Height :
- 1.12mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 2.7A, 10V
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 1.6V
- Power Dissipation :
- 500mW
- Rise Time :
- 13ns
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Terminal Position :
- Dual
- Number of Channels :
- 1
- Pbfree Code :
- yes
- Max Junction Temperature (Tj) :
- 150°C
- Radiation Hardening :
- No
- Published :
- 2017
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Length :
- 2.92mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 480pF @ 10V
- Width :
- 3.05mm
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- Nominal Vgs :
- 1.6 V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 2.7A
- Turn-Off Delay Time :
- 15 ns
- Lead Free :
- Lead Free
- Weight :
- 30mg
- Power Dissipation-Max :
- 500mW Ta
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Voltage - Rated DC :
- 30V
- Dual Supply Voltage :
- 30V
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 5V
- Element Configuration :
- Single
- Datasheets
- FDN359AN

N-Channel Tape & Reel (TR) 46m Ω @ 2.7A, 10V ±20V 480pF @ 10V 7nC @ 5V TO-236-3, SC-59, SOT-23-3
FDN359AN Description
The FDN359AN is a Logic Level PowerTrench MOSFET with a 30V N-Channel. Fairchild Semiconductor's innovative PowerTrench technology is used to make this N-Channel Logic Level MOSFET, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. These devices are ideal for low-voltage and battery-powered applications that demand little in-line power loss and quick switching.
FDN359AN Features
-
Very fast switching.
-
Low gate charge (5nC typical).
-
2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V RDS(ON) = 0.060 W @ VGS = 4.5 V.
-
High power version of industry-standard SOT-23 package. Identical pinout to SOT-23 with 30% higher power handling capability.
FDN359AN Applications
-
Battery Powered Circuits
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