FDN358P
- Mfr.Part #
- FDN358P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 10,249
- In Stock :
- 10,249
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Nominal Vgs :
- -1.9 V
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 13 ns
- Power Dissipation :
- 500mW
- Number of Channels :
- 1
- Resistance :
- 125mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Height :
- 1.22mm
- Threshold Voltage :
- -1.9V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.92mm
- Drain to Source Breakdown Voltage :
- -30V
- Dual Supply Voltage :
- -30V
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 12 ns
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 3.05mm
- Continuous Drain Current (ID) :
- 1.5A
- Current Rating :
- -1.5A
- Input Capacitance (Ciss) (Max) @ Vds :
- 182pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -30V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Published :
- 2003
- Rise Time :
- 13ns
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 10V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 30mg
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 500mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 1.5A, 10V
- Turn On Delay Time :
- 5 ns
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Datasheets
- FDN358P
FDN358P Documents

P-Channel Tape & Reel (TR) 125m Ω @ 1.5A, 10V ±20V 182pF @ 15V 5.6nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
FDN358P Description
FDN358P is a type of P-channel logic-level PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench technology which makes this device capable of minimizing on-state resistance and maintaining low gate charge. It is well suited for portable electronics applications including load switching, power management, DC-DC conversion, and battery charging circuits.
FDN358P Features
-
Extremely low RDS(ON)
-
High-performance trench technology
-
Low gate charge
-
Low on-state resistance
-
Available in the SuperSOT?-3 package
FDN358P Applications
-
Load switching
-
Power management
-
DC-DC conversion
-
Battery charging circuits
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