FDN358P

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Mfr.Part #
FDN358P
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 30V 1.5A SUPERSOT3
Stock
10,249
In Stock :
10,249

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Nominal Vgs :
-1.9 V
Max Junction Temperature (Tj) :
150°C
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Turn On Delay Time :
5 ns
Continuous Drain Current (ID) :
1.5A
Current - Continuous Drain (Id) @ 25°C :
1.5A Ta
Width :
3.05mm
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 10V
Rds On (Max) @ Id, Vgs :
125m Ω @ 1.5A, 10V
Number of Pins :
3
Pbfree Code :
yes
Threshold Voltage :
-1.9V
Dual Supply Voltage :
-30V
Current Rating :
-1.5A
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Series :
PowerTrench®
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
10 Weeks
Transistor Element Material :
SILICON
Number of Terminations :
3
Element Configuration :
Single
JESD-609 Code :
e3
Length :
2.92mm
Number of Channels :
1
Power Dissipation :
500mW
Fall Time (Typ) :
13 ns
Resistance :
125mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Voltage - Rated DC :
-30V
Height :
1.22mm
Terminal Form :
Gull wing
Drain to Source Breakdown Voltage :
-30V
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Turn-Off Delay Time :
12 ns
FET Type :
P-Channel
Terminal Position :
Dual
Package / Case :
TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Published :
2003
Input Capacitance (Ciss) (Max) @ Vds :
182pF @ 15V
Weight :
30mg
ECCN Code :
EAR99
Rise Time :
13ns
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
Power Dissipation-Max :
500mW Ta
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN358P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Number of Channels:1, Package / Case:TO-236-3, SC-59, SOT-23-3, FDN358P pinout, FDN358P datasheet PDF, FDN358P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN358P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN358P


P-Channel Tape & Reel (TR) 125m Ω @ 1.5A, 10V ±20V 182pF @ 15V 5.6nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

FDN358P Description


FDN358P is a type of P-channel logic-level PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench technology which makes this device capable of minimizing on-state resistance and maintaining low gate charge. It is well suited for portable electronics applications including load switching, power management, DC-DC conversion, and battery charging circuits.



FDN358P Features


  • Extremely low RDS(ON)

  • High-performance trench technology

  • Low gate charge

  • Low on-state resistance

  • Available in the SuperSOT?-3 package



FDN358P Applications


  • Load switching

  • Power management

  • DC-DC conversion

  • Battery charging circuits


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