FDN358P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

-1.9 V

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Turn On Delay Time :

5 ns

Continuous Drain Current (ID) :

1.5A

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Width :

3.05mm

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Rds On (Max) @ Id, Vgs :

125m Ω @ 1.5A, 10V

Number of Pins :

3

Pbfree Code :

yes

Threshold Voltage :

-1.9V

Dual Supply Voltage :

-30V

Current Rating :

-1.5A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Series :

PowerTrench®

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Number of Terminations :

3

Element Configuration :

Single

JESD-609 Code :

e3

Length :

2.92mm

Number of Channels :

1

Power Dissipation :

500mW

Fall Time (Typ) :

13 ns

Resistance :

125mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

-30V

Height :

1.22mm

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-30V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Turn-Off Delay Time :

12 ns

FET Type :

P-Channel

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

182pF @ 15V

Weight :

30mg

ECCN Code :

EAR99

Rise Time :

13ns

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

500mW Ta