FDN357N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

500mW

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Continuous Drain Current (ID) :

1.9A

Element Configuration :

Single

Current Rating :

1.9A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Height :

940μm

Resistance :

60mOhm

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.6V

JESD-609 Code :

e3

Number of Pins :

3

Mounting Type :

Surface Mount

Width :

3.05mm

Terminal Position :

Dual

ECCN Code :

EAR99

Rise Time :

12ns

Number of Elements :

1

Published :

1998

Nominal Vgs :

1.6 V

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Additional Feature :

LOGIC LEVEL COMPATIBLE

Min Breakdown Voltage :

30V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Length :

2.92mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

500mW Ta

Terminal Form :

Gull wing

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Weight :

30mg

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 5V

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Dual Supply Voltage :

30V

FET Type :

N-Channel

Turn-Off Delay Time :

12 ns

Transistor Element Material :

SILICON

Turn On Delay Time :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 10V

Number of Terminations :

3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.2A, 10V