FDN357N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.2A, 10V

Power Dissipation-Max :

500mW Ta

Nominal Vgs :

1.6 V

Threshold Voltage :

1.6V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 5V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

1.9A

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Height :

940μm

Resistance :

60mOhm

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rise Time :

12ns

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 10V

Terminal Form :

Gull wing

Number of Terminations :

3

Number of Pins :

3

Terminal Position :

Dual

Power Dissipation :

500mW

Width :

3.05mm

Mount :

Surface Mount

Element Configuration :

Single

Vgs (Max) :

±20V

Weight :

30mg

Fall Time (Typ) :

12 ns

Published :

1998

Termination :

SMD/SMT

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Min Breakdown Voltage :

30V

Lead Free :

Lead Free

Length :

2.92mm

Voltage - Rated DC :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.9A

Dual Supply Voltage :

30V

Pbfree Code :

yes

Turn On Delay Time :

5 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No