FDN357N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.6V

Width :

3.05mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

1.9A

Published :

1998

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Terminations :

3

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 10V

Current Rating :

1.9A

REACH SVHC :

No SVHC

Number of Pins :

3

Power Dissipation :

500mW

Rise Time :

12ns

Termination :

SMD/SMT

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Height :

940μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.2A, 10V

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC :

30V

FET Type :

N-Channel

Length :

2.92mm

Resistance :

60mOhm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Nominal Vgs :

1.6 V

Min Breakdown Voltage :

30V

Pbfree Code :

yes

Turn-Off Delay Time :

12 ns

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

Weight :

30mg

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

500mW Ta

Radiation Hardening :

No

Fall Time (Typ) :

12 ns

Dual Supply Voltage :

30V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Element Configuration :

Single

Turn On Delay Time :

5 ns

Transistor Application :

SWITCHING