FDN352AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Number of Channels :

1

Continuous Drain Current (ID) :

-1.3A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

10 ns

Transistor Element Material :

SILICON

Pbfree Code :

yes

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

25V

FET Type :

P-Channel

JESD-609 Code :

e3

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Fall Time (Typ) :

15 ns

Resistance :

180mOhm

Contact Plating :

Tin

Nominal Vgs :

-2 V

Operating Temperature :

-55°C~150°C TJ

Current :

13A

Terminal Form :

Gull wing

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.3A, 10V

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Length :

2.92mm

Voltage - Rated DC :

-30V

Current Rating :

-1.3A

Threshold Voltage :

-2V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Power Dissipation :

500mW

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.4mm

Vgs (Max) :

±25V

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 15V

Voltage :

30V

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Dual Supply Voltage :

-30V

Turn On Delay Time :

4 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.9nC @ 4.5V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Pins :

3

Element Configuration :

Single

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Power Dissipation-Max :

500mW Ta

Series :

PowerTrench®

Height :

1.22mm