FDN352AP
- Mfr.Part #
- FDN352AP
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.3A SUPERSOT3
- Stock
- 16,119
- In Stock :
- 16,119
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.3A, 10V
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- -30V
- Dual Supply Voltage :
- -30V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A Ta
- Series :
- PowerTrench®
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Rise Time :
- 15ns
- FET Type :
- P-Channel
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 500mW Ta
- Voltage :
- 30V
- Published :
- 2005
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Length :
- 2.92mm
- Factory Lead Time :
- 10 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 4 ns
- Turn-Off Delay Time :
- 10 ns
- Voltage - Rated DC :
- -30V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Current Rating :
- -1.3A
- Element Configuration :
- Single
- Resistance :
- 180mOhm
- Power Dissipation :
- 500mW
- Termination :
- SMD/SMT
- Max Junction Temperature (Tj) :
- 150°C
- Vgs (Max) :
- ±25V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.9nC @ 4.5V
- Nominal Vgs :
- -2 V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- -2V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 15V
- Continuous Drain Current (ID) :
- -1.3A
- Pbfree Code :
- yes
- Current :
- 13A
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 15 ns
- Transistor Element Material :
- SILICON
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.22mm
- Datasheets
- FDN352AP

P-Channel Tape & Reel (TR) 180m Ω @ 1.3A, 10V ±25V 150pF @ 15V 1.9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN352AP belongs to the family of single P-channel PowerTrench? MOSFET. Based on the advanced power trench process, it is able to achieve the minimum of the on-state resistance and maintain low gate charge for superior switching performance. It is designed to be used for low-voltage and battery-powered applications in a small surface-mounted package requiring low in-line power loss, such as notebook computer power management.
FDN352AP Features
Advanced power trench process
Drain-source voltage of -30V
Operating temperature of -55 °C to 150 °C
Available in the high power version of industry standard SOT-23 package
FDN352AP Applications
Low-voltage and battery-powered applications
Notebook computer power management
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