FDN342P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2A

Transistor Application :

SWITCHING

Weight :

30mg

Nominal Vgs :

1.05 V

Length :

2.92mm

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Resistance :

80mOhm

Element Configuration :

Single

Voltage - Rated DC :

-20V

Radiation Hardening :

No

Rise Time :

8ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 4.5V

Termination :

SMD/SMT

Number of Elements :

1

Terminal Position :

Dual

Number of Pins :

3

Threshold Voltage :

1.05V

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

500mW Ta

Vgs (Max) :

±12V

Power Dissipation :

500mW

JESD-609 Code :

e3

ECCN Code :

EAR99

Current Rating :

-2A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

2A Ta

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

REACH SVHC :

No SVHC

Turn On Delay Time :

20 ns

Dual Supply Voltage :

20V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 10V

Published :

1999

FET Type :

P-Channel

Turn-Off Delay Time :

9 ns

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

8 ns

Width :

1.4mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Series :

PowerTrench®

Lead Free :

Lead Free

Height :

940μm