FDN339AN_G
- Mfr.Part #
- FDN339AN_G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 3A SUPERSOT3
- Stock
- 8,742
- In Stock :
- 8,742
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 3A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Power Dissipation-Max :
- 500mW Ta
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Vgs (Max) :
- ±8V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Drain to Source Voltage (Vdss) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Datasheets
- FDN339AN_G

N-Channel Tape & Reel (TR) 35m Ω @ 3A, 4.5V ±8V 700pF @ 10V 10nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
FDN339AN_G Overview
The maximum input capacitance of this device is 700pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
FDN339AN_G Features
a 20V drain to source voltage (Vdss)
FDN339AN_G Applications
There are a lot of ON Semiconductor
FDN339AN_G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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