FDN339AN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

20V

Number of Pins :

3

Number of Elements :

1

Height :

1.22mm

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

850mV

FET Type :

N-Channel

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

3A

Lead Free :

Lead Free

Pbfree Code :

yes

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Width :

1.4mm

Turn On Delay Time :

8 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

10ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Voltage - Rated DC :

20V

Power Dissipation :

500mW

REACH SVHC :

No SVHC

Series :

PowerTrench®

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

35m Ω @ 3A, 4.5V

Transistor Application :

SWITCHING

Resistance :

35mOhm

Weight :

30mg

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

3A

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Operating Temperature :

-55°C~150°C TJ

Length :

2.92mm

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Power Dissipation-Max :

500mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Current Rating :

3A

Vgs (Max) :

±8V

Nominal Vgs :

850 mV

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

18 ns

Number of Channels :

1

Published :

1999

Radiation Hardening :

No