FDG330P
- Mfr.Part #
- FDG330P
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2A SC88
- Stock
- 6,548
- In Stock :
- 6,548
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 8V
- Series :
- PowerTrench®
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 12 ns
- Width :
- 1.25mm
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 12V
- Turn On Delay Time :
- 10 ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 750mW Ta
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 2A, 4.5V
- Number of Elements :
- 1
- Voltage - Rated DC :
- -12V
- Input Capacitance (Ciss) (Max) @ Vds :
- 477pF @ 6V
- Factory Lead Time :
- 48 Weeks
- Drain to Source Breakdown Voltage :
- -12V
- Published :
- 2001
- Threshold Voltage :
- -700mV
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 750mW
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 11 ns
- Vgs (Max) :
- ±8V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Current Rating :
- -2A
- Weight :
- 28mg
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Drain Current-Max (Abs) (ID) :
- 2A
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 6
- Length :
- 2mm
- Terminal Form :
- Gull wing
- Rise Time :
- 11ns
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Height :
- 1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 4.5V
- Datasheets
- FDG330P

P-Channel Tape & Reel (TR) 110m Ω @ 2A, 4.5V ±8V 477pF @ 6V 7nC @ 4.5V 12V 6-TSSOP, SC-88, SOT-363
FDG330P Description
Fairchild's innovative low voltage PowerTrench technology is used in this P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology.
FDG330P Features
Rqs(on)= 110 m£2 @ Vgs = -4.5 V
@ Vqs = —2.5 V, Rds(on)= 150
@ Vgs = —1 -8 V, Rds(on)= 215 mQ
Low entry fee
Extremely low Rqsioni with high-performance trench technology
SC70-6 surface mount package is a compact industry standard.
FDG330P Applications
?Battery administration
?Turn on the load switch
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