FDG312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

12 ns

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Width :

1.25mm

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.2A, 4.5V

Turn-Off Delay Time :

16 ns

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

8V

Radiation Hardening :

No

Height :

1mm

Published :

1999

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation :

750mW

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

P-Channel

Number of Pins :

6

Series :

PowerTrench®

Weight :

28mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Continuous Drain Current (ID) :

1.2A

REACH SVHC :

No SVHC

Resistance :

180mOhm

Rise Time :

12ns

Turn On Delay Time :

7 ns

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Position :

Dual

Power Dissipation-Max :

750mW Ta

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Contact Plating :

Tin

Vgs (Max) :

±8V

Mount :

Surface Mount

Current Rating :

-1.2A

Transistor Application :

SWITCHING

Number of Terminations :

6

Length :

2mm

Drain to Source Breakdown Voltage :

-20V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Voltage - Rated DC :

-20V

Threshold Voltage :

900mV

Mounting Type :

Surface Mount

Pbfree Code :

yes