FDG312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Power Dissipation :

750mW

ECCN Code :

EAR99

Width :

1.25mm

Fall Time (Typ) :

12 ns

Resistance :

180mOhm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Lead Free :

Lead Free

Series :

PowerTrench®

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Length :

2mm

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

7 ns

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.2A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Radiation Hardening :

No

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-20V

Published :

1999

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Vgs (Max) :

±8V

Height :

1mm

Power Dissipation-Max :

750mW Ta

Turn-Off Delay Time :

16 ns

Transistor Application :

SWITCHING

Rise Time :

12ns

Weight :

28mg

Current Rating :

-1.2A

Threshold Voltage :

900mV

Number of Elements :

1

Continuous Drain Current (ID) :

1.2A

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Gull wing

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

JESD-609 Code :

e3