FDG326P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

750mW Ta

JESD-30 Code :

R-PDSO-G6

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Drain Current-Max (Abs) (ID) :

1.5A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

467pF @ 10V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Terminal Form :

Gull wing

Pin Count :

6

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.14Ohm

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Series :

PowerTrench®

Package / Case :

6-TSSOP, SC-88, SOT-363