FDG313N
- Mfr.Part #
- FDG313N
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 950MA SC88
- Stock
- 14,902
- In Stock :
- 14,902
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 2.3nC @ 4.5V
- Element Configuration :
- Single
- Number of Pins :
- 6
- Fall Time (Typ) :
- 8.5 ns
- Transistor Element Material :
- SILICON
- Height :
- 1mm
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 750mW
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 750mW Ta
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 10V
- Turn On Delay Time :
- 3 ns
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 0.95A
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Voltage - Rated DC :
- 25V
- Vgs (Max) :
- ±8V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Current Rating :
- 950mA
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Rise Time :
- 8.5ns
- Terminal Finish :
- Tin (Sn)
- Width :
- 1.25mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 950mA Ta
- Continuous Drain Current (ID) :
- 950mA
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Weight :
- 28mg
- Turn-Off Delay Time :
- 17 ns
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Published :
- 2000
- Terminal Form :
- Gull wing
- Resistance :
- 450mOhm
- Drain to Source Breakdown Voltage :
- 25V
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 500mA, 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Length :
- 2mm
- Threshold Voltage :
- 800mV
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Datasheets
- FDG313N
FDG313N Documents

N-Channel Tape & Reel (TR) 450m Ω @ 500mA, 4.5V ±8V 50pF @ 10V 2.3nC @ 4.5V 6-TSSOP, SC-88, SOT-363
FDG313N Description
FDG313N is a type of N-Channel enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology. It shows excellent performance in lowering on-state resistance on the basis of this technology. It acts as a replacement for bipolar digital transistor and small-signal MOSFET in low voltage applications.
FDG313N Features
-
Low on-state resistance
-
Low gate charge
-
Low RDS (on)
-
Available in the SC70-6 package
-
Proprietary, high cell density, DMOS technology
FDG313N Applications
-
Load switch
-
Battery protection
-
Power management
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