FDG313N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Vgs (Max) :

±8V

REACH SVHC :

No SVHC

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistance :

450mOhm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

3 ns

Length :

2mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Rise Time :

8.5ns

Width :

1.25mm

Continuous Drain Current (ID) :

950mA

Weight :

28mg

Element Configuration :

Single

Radiation Hardening :

No

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Lead Free :

Lead Free

Current Rating :

950mA

Turn-Off Delay Time :

17 ns

Voltage - Rated DC :

25V

Published :

2000

Threshold Voltage :

800mV

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.95A

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Power Dissipation :

750mW

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

950mA Ta

Transistor Element Material :

SILICON

Height :

1mm

Mount :

Surface Mount

Fall Time (Typ) :

8.5 ns

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Power Dissipation-Max :

750mW Ta

JESD-609 Code :

e3

FET Type :

N-Channel