FDG313N

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

0.95A

Power Dissipation-Max :

750mW Ta

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Length :

2mm

Turn-Off Delay Time :

17 ns

Lead Free :

Lead Free

Current Rating :

950mA

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Voltage - Rated DC :

25V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

8.5ns

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Turn On Delay Time :

3 ns

Mount :

Surface Mount

Threshold Voltage :

800mV

Number of Terminations :

6

Height :

1mm

FET Type :

N-Channel

Weight :

28mg

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Resistance :

450mOhm

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

950mA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Fall Time (Typ) :

8.5 ns

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Power Dissipation :

750mW

Published :

2000

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

8V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Width :

1.25mm

Current - Continuous Drain (Id) @ 25°C :

950mA Ta

Drain to Source Breakdown Voltage :

25V