FDG311N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

10 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

750mW Ta

Nominal Vgs :

900 mV

Number of Elements :

1

FET Type :

N-Channel

Number of Pins :

6

Mount :

Surface Mount

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Package / Case :

6-TSSOP, SC-88, SOT-363

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes

Rise Time :

9ns

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Weight :

28mg

Length :

2mm

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

1.9A

Radiation Hardening :

No

Series :

PowerTrench®

Current Rating :

1.9A

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Vgs (Max) :

±8V

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Height :

1mm

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Contact Plating :

Tin

Width :

1.25mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

8V

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

115m Ω @ 1.9A, 4.5V

Power Dissipation :

750mW

Terminal Position :

Dual

Turn On Delay Time :

5 ns

Threshold Voltage :

900mV

Fall Time (Typ) :

9 ns