FDG311N
- Mfr.Part #
- FDG311N
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.9A SC88
- Stock
- 10,167
- In Stock :
- 10,167
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 9ns
- Length :
- 2mm
- Weight :
- 28mg
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.5nC @ 4.5V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Ta
- Factory Lead Time :
- 10 Weeks
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 20V
- Power Dissipation-Max :
- 750mW Ta
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Voltage - Rated DC :
- 20V
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 1.9A, 4.5V
- Transistor Application :
- SWITCHING
- Width :
- 1.25mm
- Turn-Off Delay Time :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 10V
- Threshold Voltage :
- 900mV
- Published :
- 2000
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Number of Pins :
- 6
- Fall Time (Typ) :
- 9 ns
- Pbfree Code :
- yes
- Height :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±8V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 8V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Power Dissipation :
- 750mW
- Current Rating :
- 1.9A
- Nominal Vgs :
- 900 mV
- Series :
- PowerTrench®
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 1.9A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Datasheets
- FDG311N

N-Channel Tape & Reel (TR) 115m Ω @ 1.9A, 4.5V ±8V 270pF @ 10V 4.5nC @ 4.5V 6-TSSOP, SC-88, SOT-363
FDG311N Description
FDG311N is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. This N-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
FDG311N Features
-
1.9 A, 20 V
-
RDS(ON) = 0.115 Ω @ VGS = 4.5 V
-
RDS(ON) = 0.150 Ω @ VGS = 2.5 V
-
Low gate charge (3nC typical).
-
High performance trench technology for extremely low RDS(ON).
-
Compact industry standard SC70-6 surface mountpackage.
FDG311N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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