FDG311N

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Mfr.Part #
FDG311N
Manufacturer
Fairchild Semiconductor
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET N-CH 20V 1.9A SC88
Stock
10,167
In Stock :
10,167

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
9ns
Length :
2mm
Weight :
28mg
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Lead Free :
Lead Free
Turn On Delay Time :
5 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
1.9A Ta
Factory Lead Time :
10 Weeks
Contact Plating :
Tin
Terminal Form :
Gull wing
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
20V
Power Dissipation-Max :
750mW Ta
REACH SVHC :
No SVHC
Element Configuration :
Single
Voltage - Rated DC :
20V
Terminal Position :
Dual
Rds On (Max) @ Id, Vgs :
115m Ω @ 1.9A, 4.5V
Transistor Application :
SWITCHING
Width :
1.25mm
Turn-Off Delay Time :
10 ns
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 10V
Threshold Voltage :
900mV
Published :
2000
Package / Case :
6-TSSOP, SC-88, SOT-363
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Number of Pins :
6
Fall Time (Typ) :
9 ns
Pbfree Code :
yes
Height :
1mm
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±8V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Number of Terminations :
6
Gate to Source Voltage (Vgs) :
8V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Power Dissipation :
750mW
Current Rating :
1.9A
Nominal Vgs :
900 mV
Series :
PowerTrench®
FET Type :
N-Channel
Number of Elements :
1
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
1.9A
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Datasheets
FDG311N
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDG311N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:6-TSSOP, SC-88, SOT-363, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Mounting Type:Surface Mount, Number of Terminations:6, FDG311N pinout, FDG311N datasheet PDF, FDG311N amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDG311N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDG311N


N-Channel Tape & Reel (TR) 115m Ω @ 1.9A, 4.5V ±8V 270pF @ 10V 4.5nC @ 4.5V 6-TSSOP, SC-88, SOT-363

FDG311N Description


FDG311N is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. This N-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.



FDG311N Features


  • 1.9 A, 20 V

  • RDS(ON) = 0.115 Ω @ VGS = 4.5 V

  • RDS(ON) = 0.150 Ω @ VGS = 2.5 V

  • Low gate charge (3nC typical).

  • High performance trench technology for extremely low RDS(ON).

  • Compact industry standard SC70-6 surface mountpackage.



FDG311N Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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