FDG315N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Power Dissipation :

750mW

Element Configuration :

Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

30V

Pbfree Code :

yes

Fall Time (Typ) :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Current Rating :

2A

Rds On (Max) @ Id, Vgs :

120m Ω @ 2A, 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Weight :

28mg

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Height :

1mm

Series :

PowerTrench®

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Width :

1.25mm

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Nominal Vgs :

1.8 V

Turn-Off Delay Time :

7 ns

Vgs (Max) :

±20V

Termination :

SMD/SMT

Terminal Position :

Dual

REACH SVHC :

No SVHC

Length :

2mm

Dual Supply Voltage :

30V

Power Dissipation-Max :

750mW Ta

ECCN Code :

EAR99

Threshold Voltage :

1.8V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

2A

Turn On Delay Time :

3 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2000

Resistance :

120mOhm

Continuous Drain Current (ID) :

2A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Mount :

Surface Mount