FDG315N
- Mfr.Part #
- FDG315N
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2A SC88
- Stock
- 26,003
- In Stock :
- 26,003
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 11ns
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Nominal Vgs :
- 1.8 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Length :
- 2mm
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 5V
- Fall Time (Typ) :
- 11 ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 2A
- Width :
- 1.25mm
- Dual Supply Voltage :
- 30V
- JESD-609 Code :
- e3
- Weight :
- 28mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 2A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 6
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 7 ns
- Height :
- 1mm
- Factory Lead Time :
- 10 Weeks
- Termination :
- SMD/SMT
- Threshold Voltage :
- 1.8V
- Voltage - Rated DC :
- 30V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Published :
- 2000
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Turn On Delay Time :
- 3 ns
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain Current-Max (Abs) (ID) :
- 2A
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Current Rating :
- 2A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 750mW Ta
- Resistance :
- 120mOhm
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 750mW
- Datasheets
- FDG315N
FDG315N Documents

N-Channel Tape & Reel (TR) 120m Ω @ 2A, 10V ±20V 220pF @ 15V 4nC @ 5V 6-TSSOP, SC-88, SOT-363
FDG315N Description
Using a PowerTrench process, the FDG315N N-Channel logic level MOSFET is produced to minimize on-state resistance while maintaining superior switching performance.
An FDG315N is ideally suited for battery-powered and low voltage applications with low in-line power loss.
FDG315N Features
-
2 A, 30 A V
-
Low gate charge (2.1nC typical).
-
RDS(on) = 0.12 Ω @ VGS = 10 V
-
RDS(on) = 0.16 Ω @ VGS = 4.5 V
-
High-performance trench technology for extremely lowRDS(ON).
-
Compact industry standard SC70-6 surface mount package.
FDG315N Applications
-
load switch
-
dc/dc converter
-
power management
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