FDG315N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11ns

Terminal Form :

Gull wing

Mount :

Surface Mount

Pbfree Code :

yes

Nominal Vgs :

1.8 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

Length :

2mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Fall Time (Typ) :

11 ns

Vgs (Max) :

±20V

FET Type :

N-Channel

Continuous Drain Current (ID) :

2A

Width :

1.25mm

Dual Supply Voltage :

30V

JESD-609 Code :

e3

Weight :

28mg

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Rds On (Max) @ Id, Vgs :

120m Ω @ 2A, 10V

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

6

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

7 ns

Height :

1mm

Factory Lead Time :

10 Weeks

Termination :

SMD/SMT

Threshold Voltage :

1.8V

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Published :

2000

Mounting Type :

Surface Mount

Number of Pins :

6

Turn On Delay Time :

3 ns

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain Current-Max (Abs) (ID) :

2A

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Current Rating :

2A

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

750mW Ta

Resistance :

120mOhm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

750mW